| 摘要 |
A semiconductor device comprising a substrate having a first crystal orientation and an insulating layer overlying the substrate is provided. A plurality of silicon layers are formed overlying the insulating layer. A first silicon layer comprises silicon having the first crystal orientation and a second silicon layer comprises silicon having a second crystal orientation. In addition, a method of forming a semiconductor device providing a silicon-on-insulator structure comprising a substrate with a silicon layer overlying the substrate and a first insulating layer interposed therebetween is provided. An opening is formed in a first region of the silicon-on-insulator structure by removing a portion of the silicon layer and the first insulating layer to expose a portion of the substrate layer. Selective epitaxial silicon is grown in the opening. A second insulating layer is formed in the silicon grown in the opening to provide an insulating layer between the grown silicon in the opening and the substrate.
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