| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of correcting a while defect of an EUV mask by using material having resistance to oxidation washing after exposure while avoiding a problem of a hard-to-remove thin film. <P>SOLUTION: A method of correcting a white defect (13) of an EUV mask including a reflection layer (12) and an absorption pattern (11) formed on the reflection layer, comprises a step for forming a correction auxiliary film (14) which can be removed by an oxygen radical, on the reflection layer adjacent to the while defect, a step for forming a white defect correction film (15) by burying Si-containing material or metal-containing material in the while defect, and a step for exposing the reflection layer by removing the correction auxiliary film with the oxygen radical. <P>COPYRIGHT: (C)2012,JPO&INPIT |
