| 摘要 |
<p>Provided are a silicon nitride film-forming device and method for filling a microscopic space between elements without producing particles. In order to provide the same, when forming a silicon nitride film on a substrate: a film-forming step is performed, in which a starting material gas (SiH4, etc.) for forming the silicon nitride film is supplied, a plasma of the starting material gas is produced, and a silicon nitride film is formed using the plasma; after the film-forming step, a sputtering step is performed, in which only a noble gas is supplied, a bias is applied to the substrate, a plasma of the noble gas is produced, and the silicon nitride film is bias sputtered using the plasma; and the film-forming step and the sputtering step are alternatingly performed.</p> |
