Circuit and method for generating reference voltage, phase change random access memory apparatus and read method using the same

摘要

A circuit for generating a reference voltage includes at least one reference cell, a reference cell write driver, a reference cell sense amplifier, and a voltage compensation unit. The reference cell is a variable resistance memory cell. The reference cell write driver writes data to the reference cell. The reference cell sense amplifier reads out the data stored in the reference cell on the basis of a predetermined reference voltage. A voltage compensation unit outputs a compensation reference voltage by controlling the reference voltage in accordance with the output value of the sense amplifier.