发明名称 |
Heating center PCRAM structure and methods for making |
摘要 |
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change material on the bottom electrode. A resistive heater comprising a heater material is on the first phase change material. A second phase change layer comprising a second phase change material is on the resistive heater, and a top electrode is on the second phase change layer. The heater material has a resistivity greater than the most highly resistive states of the first and second phase change materials. |
申请公布号 |
US8158965(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20080026342 |
申请日期 |
2008.02.05 |
申请人 |
CHEN SHIH-HUNG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH-HUNG |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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