| 摘要 |
A laser diode is provided to improve thermal and electrical stability by including a transparent electrode at a part of upper portion adjacent to front and rear mirror surface. An laser diode includes a conductive substrate, an N-electrode pad(10), a thin film structure, a p-clad layer, a p-ohmic metal layer, a transparent electrode(60), a first p-electrode pad(40), and a second p-electrode pad(50). The conductive substrate is a gallium nitride substrate doped with n-type impurity. The N-electrode pad(10) is formed at a lower side of the conductive substrate. The thin film structure is a nitride semiconductor structure formed by sequentially laminating an n-clad layer, an n-waveguide layer, an active layer(20), an electron blocking layer, and a p-waveguide layer, and is formed on the conductive substrate. The p-clad layer is formed on the p-waveguide layer which forms the uppermost layer of the thin film structure, and has a linearly protruded ridge. The p-ohmic metal layer is formed only at an upper side of the ridge linearly protruded from the p-clad layer.
|
