发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment. |
申请公布号 |
US8158332(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20100689830 |
申请日期 |
2010.01.19 |
申请人 |
MATSUNAGA KENTARO;OORI TOMOYA;SHIOBARA EISHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUNAGA KENTARO;OORI TOMOYA;SHIOBARA EISHI |
分类号 |
G03C5/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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