SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent process failure by including an etching stop pattern which covers source/drain regions under the upper surface of a metal gate electrode. CONSTITUTION: A metal gate electrode(163) is laminated by arranging a gate insulating film on a semiconductor substrate(100). Spacer structures are arranged on the semiconductor substrate. A source/drain region is formed within the semiconductor substrate. An etching stop pattern(141) comprises a sidewall part and a bottom part for covering the source/drain region. The sidewall part covers a part of a sidewall of the spacer structure by being extended from the bottom part.