| 摘要 |
A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber. |
