发明名称 |
Photomask for extreme ultraviolet lithography and method for fabricating the same |
摘要 |
A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern. |
申请公布号 |
US8158305(B2) |
申请公布日期 |
2012.04.17 |
申请号 |
US20090649566 |
申请日期 |
2009.12.30 |
申请人 |
OH SUNG HYUN;HYNIX SEMICONDUCTOR INC. |
发明人 |
OH SUNG HYUN |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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