Memory module cutting off DM pad leakage current

摘要

A memory module includes: an ODT circuit on a memory device and including pull-up and pull-down resistors connected between pull-up and pull-down transistors. A data masking (DM) pad is provided in a tap region of the module board. A current leakage monitoring unit is also provided and receives a ground state signal from the DM pad and a bit configuration signal from the memory device and disables the pull-up transistors to cut off a current path between the pull-up resistors of the ODT circuit and the DM pad during a ODT enable mode.