NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a forming method thereof are provided to minimize a program disturbance phenomenon by controlling distances of a dummy word line, a word line, a ground selection line, and a string selection line. CONSTITUTION: A ground selection line(GSL) is located on one side of word lines. A string selection line(SSL) is located on the other side of word lines. A first dummy word line(DWL1) is interposed between the ground selection line and the word line. A second dummy word line is interposed between the string selection line and the word line. A first distance between a first dummy word line and a ground selection line and a second distance between a ground selection line and a first dummy word line are longer than a third distance between word lines.