METHOD FOR FORMING GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gate formation method of a semiconductor device is provided to simplify a process by directly using aluminum which is a first metal instead of a first sacrificial film. CONSTITUTION: First and second recesses(102,202) are filled with a first sacrificial film. The first sacrificial film of the second recess is selectively eliminated. A first metal is deposited on an inner wall of the second recess. The first sacrificial film of the first recess is eliminated. The first and second recesses are filled with a second metal.