| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the increase of a contact resistance of a storage node contact plug by etching only the interlayer insulation layer after a bit line is formed. CONSTITUTION: A first bit line(41) partially fills a first bit line hole. A first sacrificial layer fills the remaining of the first bit line hole. A storage node contact hole(43) is formed by selectively etching an interlayer dielectric layer(38). A first spacer(44) is formed in the sidewall of the first bit line and the sidewall of the storage node contact hole. A storage node contact plug(45) fills the storage node contact hole and is separated by the first bit line.
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