| 摘要 |
PURPOSE: A nonvolatile memory device and a manufacturing method of the same are provided to form junction areas having various depths by forming a barrier dummy pattern as well as a driving gate around a semiconductor substrate. CONSTITUTION: A semiconductor substrate(101) comprises a cell array region and a peripheral area. A first gate pattern(G) is formed around a semiconductor substrate. The first gate pattern comprises a first pattern(G1) and a second pattern(G2) on both sides of the first pattern. The gate pattern is formed on the cell array of the semiconductor substrate. The second gate pattern includes a drain select gate, a source select gate and a cell gate.
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