发明名称 |
INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME |
摘要 |
The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect. |
申请公布号 |
US2012086101(A1) |
申请公布日期 |
2012.04.12 |
申请号 |
US20100898885 |
申请日期 |
2010.10.06 |
申请人 |
DEMUYNCK DAVID A.;HE ZHONG-XIANG;MIGA DANIEL R.;MOON MATTHEW D.;VANSLETTE DANIEL S.;WHITE ERIC J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DEMUYNCK DAVID A.;HE ZHONG-XIANG;MIGA DANIEL R.;MOON MATTHEW D.;VANSLETTE DANIEL S.;WHITE ERIC J. |
分类号 |
H01L29/86;H01L21/02;H01L23/522 |
主分类号 |
H01L29/86 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|