| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the yield by improving the selective etching property of an etching stopper layer in an enhancement mode transistor device and a depression mode transistor device. <P>SOLUTION: An InGaP etching stop/Schottky contact layer of an enhancement mode transistor device is disposed on a channel layer 20. A first layer 26 different from InGaP is disposed thereon. A depression mode transistor device etching stop layer 28 is disposed on the first layer. A second layer 30 is disposed on the etching stop layer. The depression mode transistor device has a gate recess that penetrates through the second layer and the etching stop layer and that ends at the first layer. The enhancement mode transistor device has a gate recess that penetrates through the second layer, the depression mode transistor device etching stop layer, and the first layer and that ends at the InGaP layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
