| 摘要 |
PURPOSE: A memory device is provided to increase the time for maintaining data by suppressing the leakage of electrons due to a tunnel effect from an electric charge trapping layer. CONSTITUTION: A gate insulation layer(15) is closely arranged to a silicon layer(11). A gate electrode is closely arranged to the gate insulation layer. The gate insulation layer includes a tunnel oxide layer(12), a electric charge trapping layer(13) and a block oxide layer(14). The gate electrode is formed on the block oxide layer. The silicon layer includes a sandwiched part by the gate insulation layer.
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