| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method capable of processing a substrate by once dry etching, where a second pattern is formed in a part having no first resist pattern formation and double patterning is conducted to reduce the pitch between patterns to half. <P>SOLUTION: A first positive resist material comprises a polymer compound obtained by copolymerization of a repeating unit having lactone as an adhesive group with an acid-labile group-containing repeating unit; a photoacid generator; and a base generator having an amino group and a carboxyl group substituted by a 9-fluorenylmethyloxycarbonyl group. A pattern formation method comprises a first resist film formation step of coating a substrate with the first positive resist material; a pattern formation step of exposing the first resist film to light, heat-treating and developing; a second resist film formation step of heating the film and generating an amine compound with a base generator so as to inactivate it to acid, and coating the pattern with a second positive resist material without dissolving the pattern; and a step of exposing a second resist film to light followed by PEB and then developing to form a second resist pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
