| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputter target enabling the formation of a Ti-Al-N film excellent in the property and quality as a barrier film with good reproducibility. <P>SOLUTION: A sputter target is made of a Ti-Al alloy containing Al in the range of 1 to 30 atom%. In the Ti-Al alloy, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti. Furthermore, an average crystal grain diameter of the Ti-Al alloy is 500 μm or less, and variation in crystal grain diameter in the entire target is limited within 30%. An average oxygen content of the Ti-Al alloy is 1,070 ppm by weight or lower. <P>COPYRIGHT: (C)2012,JPO&INPIT |
