| 摘要 |
<p>In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.</p> |
