发明名称 Polymer interlayer dielectric and passivation materials for a microelectronic device
摘要 Polymer interlayer dielectric and passivation materials for a microelectronic device are generally described. In one example, an apparatus includes one or more interconnect structures of a microelectronic device and one or more polymeric dielectric layers coupled with the one or more interconnect structures, the polymeric dielectric layers including copolymer backbones having a first monomeric unit and a second monomeric unit wherein the first monomeric unit has a different chemical structure than the second monomeric unit and wherein the copolymer backbones are cross-linked by a first cross-linker or a second cross-linker, or combinations thereof.
申请公布号 US8154121(B2) 申请公布日期 2012.04.10
申请号 US20080037625 申请日期 2008.02.26
申请人 SHAH KUNAL;HAVERTY MICHAEL;SHANKAR SADASIVAN;INGERLY DOUG;KLOSTER GRANT;INTEL CORPORATION 发明人 SHAH KUNAL;HAVERTY MICHAEL;SHANKAR SADASIVAN;INGERLY DOUG;KLOSTER GRANT
分类号 H01L23/48 主分类号 H01L23/48
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