发明名称 |
Polymer interlayer dielectric and passivation materials for a microelectronic device |
摘要 |
Polymer interlayer dielectric and passivation materials for a microelectronic device are generally described. In one example, an apparatus includes one or more interconnect structures of a microelectronic device and one or more polymeric dielectric layers coupled with the one or more interconnect structures, the polymeric dielectric layers including copolymer backbones having a first monomeric unit and a second monomeric unit wherein the first monomeric unit has a different chemical structure than the second monomeric unit and wherein the copolymer backbones are cross-linked by a first cross-linker or a second cross-linker, or combinations thereof. |
申请公布号 |
US8154121(B2) |
申请公布日期 |
2012.04.10 |
申请号 |
US20080037625 |
申请日期 |
2008.02.26 |
申请人 |
SHAH KUNAL;HAVERTY MICHAEL;SHANKAR SADASIVAN;INGERLY DOUG;KLOSTER GRANT;INTEL CORPORATION |
发明人 |
SHAH KUNAL;HAVERTY MICHAEL;SHANKAR SADASIVAN;INGERLY DOUG;KLOSTER GRANT |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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