发明名称 Power semiconductor module
摘要 A power semiconductor module is disclosed. One embodiment includes a multilayer substrate having a plurality of metal layers and a plurality of ceramic layers, where the ceramic layers are located between the metal layers.
申请公布号 US8154114(B2) 申请公布日期 2012.04.10
申请号 US20070834395 申请日期 2007.08.06
申请人 BAYERER REINHOLD;INFINEON TECHNOLOGIES AG 发明人 BAYERER REINHOLD
分类号 H01L23/12 主分类号 H01L23/12
代理机构 代理人
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