UNIFIED RANDOM ACCESS MEMORY AND THE METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A high integrated semiconductor combination memory device and a manufacturing method thereof are provided to easily realize the system on chip by realizing a non-volatile memory device and volatile memory device in a single transistor phase. CONSTITUTION: Source(102) and drain electrode(103) are formed on a substrate(101). The source and drain electrode are formed into a channel area(104) and a metal silicide which is short-key connected. A tunneling insulating layer(105) is formed on the substrate of the channel area. A floating gate(106) is formed on the tunneling insulating layer. A control insulating layer(107) is formed on the floating gate. The control gate is formed on the control insulating layer.