| 摘要 |
PURPOSE: A capacitor manufacturing method is provided to eliminate a sacrificial film using a plasma etching method, thereby selectively eliminating the sacrificial film without a fall of a storage node. CONSTITUTION: An inter-layer insulating film(22) is formed on a substrate(21). An etching stop film(24) is formed on the inter-layer insulating film. A pillar is formed on the substrate in which the etching stop film is formed. A sacrificial film is formed for filling a gap between the pillars. A hole is formed within the sacrificial film by eliminating the pillar. A storage node(28) is formed within the hole.
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