发明名称 COMPOSITION FOR FORMING RESIST LOWER LAYER FILM, POLYMER, RESIST LOWER LAYER FILM, PROCESS FOR FORMING PATTERN AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A composition for forming a resist sub layer, polymer, a resist sub layer, a patter forming method, and a semiconductor device manufacturing method are provided to improve the etching speed of a pattern forming process based on a dry etching technique. CONSTITUTION: A composition for forming a resist sub layer includes polymer with a cyclic carbonate structure. A method for forming patterns includes the following: the resist sub layer is formed by applying the composition on a substrate; a resist layer is formed by applying a resist composition on the resist sub layer; the resist layer is exposed by selectively irradiating radiation using a photo mask; the exposed resist layer is developed to form resist patterns; the resist patterns are used as a mask for dry etching the resist sub layer and the substrate to form patterns.
申请公布号 KR20120033268(A) 申请公布日期 2012.04.06
申请号 KR20110098200 申请日期 2011.09.28
申请人 JSR CORPORATION 发明人 NAKAHARA KAZUO;NAGAI TOMOKI
分类号 G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/11
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