发明名称 |
COMPOSITION FOR FORMING RESIST LOWER LAYER FILM, POLYMER, RESIST LOWER LAYER FILM, PROCESS FOR FORMING PATTERN AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A composition for forming a resist sub layer, polymer, a resist sub layer, a patter forming method, and a semiconductor device manufacturing method are provided to improve the etching speed of a pattern forming process based on a dry etching technique. CONSTITUTION: A composition for forming a resist sub layer includes polymer with a cyclic carbonate structure. A method for forming patterns includes the following: the resist sub layer is formed by applying the composition on a substrate; a resist layer is formed by applying a resist composition on the resist sub layer; the resist layer is exposed by selectively irradiating radiation using a photo mask; the exposed resist layer is developed to form resist patterns; the resist patterns are used as a mask for dry etching the resist sub layer and the substrate to form patterns.
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申请公布号 |
KR20120033268(A) |
申请公布日期 |
2012.04.06 |
申请号 |
KR20110098200 |
申请日期 |
2011.09.28 |
申请人 |
JSR CORPORATION |
发明人 |
NAKAHARA KAZUO;NAGAI TOMOKI |
分类号 |
G03F7/11;G03F7/26;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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