| 摘要 |
1,265,260. Semi-conductor devices. SIEMENS A.G. 18 Sept., 1970 [19 Sept., 1969], No. 44553/70. Heading H1K. The metal layer 2 providing the barrier contact 6 of a Schottky diode is covered by a layer 3 of a second metal having a higher electron escape energy than the metal of layer 2, the layer 3 extending peripherally beyond the layer 2 to provide protection against instabilities in the forward characteristic. In the embodiment the semi-conductor body 1 is of N-type Si, the metal layer 2 is of Cr or W and the metal layer 3 is of Au, the layers 2, 3 being formed by evaporation. |
