发明名称 MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF
摘要 Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.
申请公布号 US2012081959(A1) 申请公布日期 2012.04.05
申请号 US201113272879 申请日期 2011.10.13
申请人 LEE CHANGHYUN;CHOI JUNGDAL;CHOE BYEONG-IN 发明人 LEE CHANGHYUN;CHOI JUNGDAL;CHOE BYEONG-IN
分类号 G11C16/10;G11C16/04;G11C16/06 主分类号 G11C16/10
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