| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor integrated circuit device in which stability of the element characteristics can be enhanced. <P>SOLUTION: The manufacturing method of a semiconductor integrated circuit device includes a step for forming a first oxide film 103 on the surface of a silicon substrate 101, a step for injecting impurities into a predetermined part of the silicon substrate 101 in a peripheral circuit region A2, removing the first oxide film 103 on the predetermined part and forming a second oxide film 112 on the predetermined part, a step for forming a tunnel window in the first oxide film 103 in a memory cell region A1, forming a tunnel oxide film 116 on the silicon substrate 101 exposed in the tunnel window, and forming a polysilicon film 118 for memory cells covering the tunnel oxide film 116, and a step for forming an ONO film 119 on the polysilicon film 118 for memory cells after the step for forming the second oxide film 112. <P>COPYRIGHT: (C)2012,JPO&INPIT |
