| 摘要 |
Provided is a method for preparing a copper indium selenide (CIS) or copper indium gallium selenide (CIGS) thin film, including: (1) mixing Cu, In and Ga precursors in a solvent and adding a polymer binder to obtain a paste or ink; (2) coating the obtained CIG precursor paste or ink on a conductive substrate by printing, spin coating or spraying and heat-treating the same under air or oxygen gas atmosphere to remove remaining organic substances and obtain a CIG mixed oxide thin film; (3) heat-treating the obtained CIG mixed oxide thin film under hydrogen or sulfurizing gas atmosphere to obtain a reduced or sulfurized CIG mixed thin film; and (4) heat-treating the obtained reduced or sulfurized CIG mixed thin film under selenium-containing gas atmosphere to obtain a CIGS thin film. Since residual carbon resulting from organic additives, which is the biggest problem in the existing paste coating techniques, can be reduced remarkably, and CIGS crystal size can be improved, the disclosed method can improve efficiency of CIGS solar cells.
|
