发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME |
摘要 |
One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer. |
申请公布号 |
US2012080795(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US20100894189 |
申请日期 |
2010.09.30 |
申请人 |
DALLMANN GERALD;MEINHOLD DIRK;VATER ALFRED |
发明人 |
DALLMANN GERALD;MEINHOLD DIRK;VATER ALFRED |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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