Semiconductor device having vertical type transistor

摘要

A semiconductor device includes: a first vertical type transistor having a first lower diffusion layer, a first upper diffusion layer, and a gate electrode; a second vertical type transistor having a second lower diffusion layer, a second upper diffusion layer, and a second gate electrode; a gate wiring connected to the first and second gate electrodes; a first wiring connected to the first lower diffusion layer and second upper diffusion layer; and a second wiring connected to the first upper diffusion layer and second lower diffusion layer.