| 摘要 |
<p>Provided is a solid-state imaging device which can achieve a wide dynamic range without the aperture ratio being decreased and is capable of imaging even under high illumination. The solid-state imaging device has an imaging region (2A) in which pixel sections formed on the surface of a semiconductor substrate (20) are arranged in a two-dimensional manner. The imaging region (2A) comprises, as arrangement units, pixel blocks comprising two rows and two columns of the pixel sections. These pixel blocks comprise red pixels (11R) that detect a red-colour signal, blue pixels (11B) that detect a blue-colour signal, white pixels (11W1) that detect a first brightness signal, and white pixels (11W2) that detect a second brightness signal. An optical attenuation filter that decreases the optical transparency of a visible light region is provided in the upper section of the light-receiving face of the white pixels (11W2).</p> |
