发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
摘要 <p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to connect an insulating substrate and a semiconductor chip or a heat dissipation base using a lead-free welding operation, thereby preventing environmental contamination by suppressing a leakage of lead. CONSTITUTION: A semiconductor chip(4) is welded on an insulating substrate(2) while placing a solder layer(3) between the semiconductor chip and the insulating substrate. The solder layer welds the insulating substrate and the semiconductor chip. The insulating substrate comprises a ceramic substrate(2a) and conductive layers(2b,2c) arranged on both surfaces of the ceramic substrate. The insulating substrate is welded on a heat dissipation base(6) while placing the solder layer between the insulating substrate and the heat dissipation base. The solder layer(5) welds the insulating substrate and the heat dissipation base.</p>
申请公布号 KR20120032497(A) 申请公布日期 2012.04.05
申请号 KR20120009720 申请日期 2012.01.31
申请人 FUJI ELECTRIC CO., LTD. 发明人 NISHIMURA YOSHITAKA;MOROZUMI AKIRA;OHNISHI KAZUNAGA;MOCHIZUKI EIJI;TAKAHASHI YOSHIKAZU
分类号 H01L23/488;H01L23/12;H01L23/34 主分类号 H01L23/488
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