| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device with a simplified structure. <P>SOLUTION: A semiconductor storage device includes a plurality of memory cell units 3 provided over a substrate surface and including a plurality of memory cells connected in series. Each memory cell includes a semiconductor column 9, and a conductive film and an insulation film 5 around the semiconductor column 9, and stores data in a nonvolatile manner. The memory cell units form a plurality of blocks. A pipe layer PC includes a semiconductor layer connected to each semiconductor column of the first and second memory cell units adjacent to each other. A conductive plate BG is provided between each end of the first and second memory cell units and a surface of a semiconductor substrate, includes inside the pipe layers of at least two blocks, and controls conduction or non-conduction of the inside pipe layers. Supply path structures CBG1, LBG1, CBG2, TBG, and CBG3 are connected to the plate and supply to the plate the potential of a plate line DBG to be applied to the plate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
