| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming apparatus which is configured to form a thin film having a high light transmittance and a high surface smoothness by accelerating the reactivity of a film formed on a film forming plane of a substrate by irradiating the film forming plane with ion beams, when a dielectric film is formed. <P>SOLUTION: The apparatus forms a stacked thin film by accelerating of the reaction between the thin film and a reaction gas and etching of a portion of the thin film, by moving a substrate 4 so that the substrate 4 is opposed to a film forming means, a reacting means 30 and an ion gun 11 while operating the film forming means, the reacting means 30 and the ion gun 11, and repeatedly performing film formation by the film forming means, reaction by the reacting means and irradiation with ion beams by the ion gun. <P>COPYRIGHT: (C)2012,JPO&INPIT |
