发明名称 |
LOW OPERATIONAL CURRENT PHASE CHANGE MEMORY STRUCTURES |
摘要 |
Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
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申请公布号 |
US2012080657(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113324946 |
申请日期 |
2011.12.13 |
申请人 |
CHEN SHIH-HUNG;CHEN YI-CHOU;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN SHIH-HUNG;CHEN YI-CHOU |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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