发明名称 SCHOTTKY JUNCTION ELEMENT USING OXIDE SEMICONDUCTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a Schottky junction element having desired characteristics while reducing the cost when the Schottky junction element is formed by laminating a metal oxide film and a conductive polymer film. <P>SOLUTION: The Schottky junction element is constituted by laminating a metal oxide film containing at least tungsten-doped indium and having a previously controlled carrier concentration, and a conductive polymer film. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069581(A) 申请公布日期 2012.04.05
申请号 JP20100211033 申请日期 2010.09.21
申请人 BRIDGESTONE CORP 发明人 SHIINO OSAMU;SUGIE KAORU
分类号 H01L29/47;H01L29/872 主分类号 H01L29/47
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