发明名称 THIN FILM DIELECTRIC
摘要 <P>PROBLEM TO BE SOLVED: To solve such a problem that characteristics of conventional thin film dielectrics deteriorate in accordance with a reduced film thickness. <P>SOLUTION: A thin film dielectric with a nano granular structure has the following composition and structure. (A) Composition: having a general formula Fe<SB POS="POST">a</SB>Co<SB POS="POST">b</SB>Ni<SB POS="POST">c</SB>M<SB POS="POST">w</SB>N<SB POS="POST">x</SB>O<SB POS="POST">y</SB>F<SB POS="POST">z</SB>, in the formula, an M component is Mg, Al, Si, Ti, Y, Zr, Nb, Hf and/or Ta, composition ratios a, b, c, w, x, y and z are, in atomic ratio (%), satisfy 0&le;a&le;60, 0&le;b&le;60, 0&le;c&le;60, 10<a+b+c<60, 10&le;w&le;50, 0&le;x&le;50, 0&le;y&le;50, 0&le;z&le;50, 20&le;x+y+z&le;70 and a+b+c+w+x+y+z=100. (B) Structure: comprising Fe, Co and/or Ni, while nm-size metal granules are dispersed in an insulation matrix comprising the M component and at least one selected among N, O and F. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069428(A) 申请公布日期 2012.04.05
申请号 JP20100214360 申请日期 2010.09.24
申请人 RESEARCH INSTITUTE FOR ELECTROMAGNETIC MATERIALS 发明人 KOBAYASHI NOBUKIYO;IWASA TADAYOSHI;YOKOI ATSUSHI;ONUMA SHIGEHIRO
分类号 H01B3/02;C01B33/10;C01G49/10;C01G51/00;C01G53/00;C03C17/245;H01B3/00;H01G4/33 主分类号 H01B3/02
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