发明名称 |
METHOD FOR MANUFACTURING TRANSISTOR |
摘要 |
To provide a method for manufacturing a transistor which has little variation in characteristics and favorable electric characteristics. A gate insulating film is formed over a gate electrode; a semiconductor layer including a microcrystalline semiconductor is formed over the gate insulating film; an impurity semiconductor layer is formed over the semiconductor layer; a mask is formed over the impurity semiconductor layer, and then the semiconductor layer and the impurity semiconductor layer are etched with use of the mask to form a semiconductor stacked body; the mask is removed and then the semiconductor stacked body is exposed to plasma generated in an atmosphere containing a rare gas to form a barrier region on a side surface of the semiconductor stacked body; and a wiring over the impurity semiconductor layer of the semiconductor stacked body is formed. |
申请公布号 |
US2012083078(A1) |
申请公布日期 |
2012.04.05 |
申请号 |
US201113236837 |
申请日期 |
2011.09.20 |
申请人 |
TORIUMI SATOSHI;FURUKAWA SHINOBU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TORIUMI SATOSHI;FURUKAWA SHINOBU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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