| 摘要 |
<p>The purpose of the present invention is to improve uniformity of etching of a silicon-containing material. A substrate (9) to be processed, said substrate being coated with a silicon-containing material (9a), is supported on a virtual plane (PL), and the substrate is relatively moved in the transfer direction (x) with respect to a nozzle (30). A processing gas containing a fluorine-based reactive component is brought into contact with a substrate to be processed (9) by blowing out the processing gas from a blow out port (31) of the nozzle (30). The nozzle (30) extends in the width direction (y) that orthogonally intersects the transfer direction (x), and a cross-section that orthogonally intersects the width direction (y) is tapered toward the virtual plane (PL). The blow out port (31) is opened in the tip of the nozzle (30). A reaction field (1a) is defined between the tip of the nozzle (30) and the virtual plane (PL), and a diffusion space (1e) is defined between the tilted side surface (34) of the nozzle (30) and the virtual plane (PL).</p> |
