发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To improve the light emission distribution of an entire element by homogenizing the current density between a pair of positive and negative electrodes in a semiconductor light-emitting element formed with the electrodes having a semiconductor layer sandwiched between the electrodes. <P>SOLUTION: A semiconductor light-emitting element 10 comprises: a semiconductor layer 2; a plurality of first electrodes 3 arranged alternately in parallel to each other so as to face each other on a top surface of the semiconductor layer 2; and a second electrode 4 arranged on a bottom surface of the semiconductor layer 2. The first electrode 3 comprises: an external connection part 3a for connecting with the outside; a first extension part 3b extending in a direction to a central region on the top surface of the semiconductor layer 2; and a second extension part 3c extending to the inside of the periphery of the semiconductor layer 2 in a direction opposite to the first extension part 3b. The first extension parts 3b of the first electrodes 3 that face each other on the top surface of the semiconductor layer 2 are arranged so that the first extension parts 3b face each other in a direction where the end sides thereof are adjacent to each other in the central region. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012069934(A) 申请公布日期 2012.04.05
申请号 JP20110182683 申请日期 2011.08.24
申请人 NICHIA CHEM IND LTD 发明人 TANAKA HIDETOSHI;ENOMURA KEIJI
分类号 H01L33/38;H01L29/41 主分类号 H01L33/38
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