POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING SAME

摘要

This power semiconductor module comprises a power semiconductor element on one main surface of which is formed a plurality of control electrodes, a first conductor plate joined to the one main surface of the power semiconductor element via a first solder material, and a second conductor plate joined to the other main surface of the power semiconductor element via a second solder material. A first protruding part having a first protruding surface on the upper surface thereof is formed on the first conductor plate so as to protrude from the base part of the first conductor plate. A second protruding part having a second protruding surface that faces the one main surface of the power semiconductor element is formed on the first protruding surface of the first conductor plate. The first solder material intervenes between the power semiconductor element and first conductor plate avoiding the plurality of control electrodes. When projected from a direction perpendicular to the one main surface of the power semiconductor element, the second protruding part is formed so that a projected part of a prescribed edge of the second protruding surface overlaps a projected part of a step formed between the base part of the first conductor plate and the first protruding part. The plurality of control electrodes of the power semiconductor element is formed along the prescribed edge of the second protruding surface.