| 摘要 |
<p>PURPOSE: A cleaning agent for a semiconductor substrate, a cleaning method using the same, and a method for manufacturing a semiconductor device are provided to eliminate or exfoliate ion-implanted resist or impurities from the surface of a semiconductor substrate. CONSTITUTION: A cleaning agent for a semiconductor substrate uses sulfuric acid, hydrogen peroxide, and alkylene carbonate. The alkylene carbonate is ethylene carbonate or propylene carbonate. A cleaning method using the cleaning agent includes a process for cleaning the semiconductor substrate based on the sulfuric acid, the hydrogen peroxide, and the alkylene carbonate. A method for manufacturing a semiconductor device includes an alkylene carbonate and hydrogen peroxide mixture or alkylene carbonate-based cleaning process and a sulfuric acid, hydrogen peroxide, and alkylene carbonate mixture-based cleaning process.</p> |
