Semiconductor device and method for forming the same

摘要

A method for forming a semiconductor device is provided. The method comprises: forming at least one gate stack structure and inter-layer material layers (160, 162) between the gate stack structures on a semiconductor substrate (100); determining isolating regions and removing the inter-layer material layers (160, 162) and part of the height of the semiconductor substrate (100) in the regions to form grooves (180); removing the semiconductor substrate (100) which supports the gate stack structures in the regions; filling the grooves (180) with insulating material. A semiconductor device is also provided. It can reduce the area of the isolating region.