发明名称 |
Semiconductor device and electronic apparatus using the same |
摘要 |
The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source. |
申请公布号 |
US8149043(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20100722786 |
申请日期 |
2010.03.12 |
申请人 |
KIMURA HAJIME;WATANABE YASUKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KIMURA HAJIME;WATANABE YASUKO |
分类号 |
H03K17/687;G11C27/02;H03F1/30;H03F3/08;H03F3/45;H03F3/50;H03K19/003 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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