发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED GATE
摘要 A method for fabricating a semiconductor device includes forming an insulation layer, hydroxylating a surface of the insulation layer by performing a pre-treatment, forming an adhesive layer over the insulation layer, performing a post-treatment, and forming a conductive layer over the adhesive layer.
申请公布号 KR101131891(B1) 申请公布日期 2012.04.03
申请号 KR20100074254 申请日期 2010.07.30
申请人 发明人
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
代理机构 代理人
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