发明名称 |
Group III nitride semiconductor wafer and group III nitride semiconductor device |
摘要 |
A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0<X≦̸1), a first AlGaN layer made of group III nitride-based semiconductor containing Al and disposed on the substrate, and a second AlGaN layer made of group III nitride-based semiconductor having a bandgap greater than the first AlGaN layer and disposed thereon. The full width at half maximum values of X-ray rocking curves for (0002) and (10-12) planes of the first AlGaN layer are less than 1000 arcseconds. |
申请公布号 |
US8148751(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20100732775 |
申请日期 |
2010.03.26 |
申请人 |
HASHIMOTO SHIN;TANABE TATSUYA;AKITA KATSUSHI;NAKAHATA HIDEAKI;AMANO HIROSHI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HASHIMOTO SHIN;TANABE TATSUYA;AKITA KATSUSHI;NAKAHATA HIDEAKI;AMANO HIROSHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|