发明名称 Organic thin film transistor and organic thin film light-emitting transistor
摘要 An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an acetylene or olefin structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
申请公布号 US8148720(B2) 申请公布日期 2012.04.03
申请号 US20070516071 申请日期 2007.11.15
申请人 SAITO MASATOSHI;NAKANO YUKI;NAKAMURA HIROAKI;IDEMITSU KOSAN CO., LTD. 发明人 SAITO MASATOSHI;NAKANO YUKI;NAKAMURA HIROAKI
分类号 H01L29/08 主分类号 H01L29/08
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