SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and its manufacturing method are provided to improve operation characteristics by using a nonuniform metal silicide structure composed of first and second metal silicon patterns. A pre-gate pattern with an uppermost layer made of a polysilicon layer is formed on a substrate(100). A doped region is formed at both sides of the pre-gate pattern in the substrate. A spacer(106) is formed at both sidewalls of the pre-gate pattern. A silicon oxide pattern is formed on the substrate. A metal film is formed along an upper surface of the resultant structure. A gate pattern including a first metal silicide pattern(114) with a first thickness and a second metal silicide pattern(116) on the doped region are simultaneously formed on the resultant structure by reacting the metal film on the pre-gate pattern and the substrate. The second metal silicide pattern has a second thickness. The second thickness of the second metal silicide pattern is smaller than the first thickness of the first metal silicide layer.